Simulation of a cobalt silicide/Si hetero-nanocrystal memory
نویسندگان
چکیده
A nanocrystal memory using CoSi2/Si hetero-nanocrystals as floating gate was proposed. Numerical investigations on the writing, erasing and retention were performed. The hetero-structure provides an extra quantum well for the charge to achieve much longer retention time while maintains a writing/erasing speed similar to that of Si nanocrystal memory. 2005 Elsevier Ltd. All rights reserved. PACS: 72.20.Jv; 73.21.La; 73.90.+f; 74.50.+r
منابع مشابه
Transient processes in a Ge/Si hetero-nanocrystal p-channel memory
Transient processes of Ge/Si hetero-nanocrystal floating gate memories are simulated numerically. Compared with Si nanocrystal memories, Ge/Si hetero-nanocrystal memories show similar writing and erasing efficiency with a weaker writing saturation and markedly improved retention characteristics. 2006 Elsevier Ltd. All rights reserved. PACS: 72.20.Jv; 73.21.La; 73.90.+f; 74.50.+r
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